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Wafer Processing

A series of special methods for further processing of wafers have established themselves today in chip production which aid configuration of material characteristics or improvement of quality and performance. These include processes such as coating with molecular beam or (metal organic) vapour phase epitaxy, where thin, mainly crystalline layers are grown epitaxially (with the same crystal structure as that of the substrate) in a vacuum at increased temperatures. Ion implantation involves doping of silicon with phosphorous, boric or arsenic ions, to name only the most important elements. Dielectric layers are applied in vertical furnaces or single wafer CVD processes and insulate the surface of the wafer.

The strictest conditions govern the materials used in these processes e.g. for handling or receiving the wafer (susceptors): temperatures around 1000 °C, maximum purity requirements, ion bombarding and the high vacuum lead to extreme stress. These are complemented by intensive cleaning and etching processes after every run to remove metal residues still remaining. Ceramic materials or materials coated with ceramics play the primary role next to quartz glass and graphite here for this reason.

| Epitaxie

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| Ion Implantion

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| Single Wafer Processing

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